• Medientyp: Buch
  • Titel: Dopants and defects in semiconductors
  • Enthält: Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization
  • Beteiligte: McCluskey, Matthew D. [VerfasserIn]; Haller, Eugene E. [VerfasserIn]
  • Erschienen: Boca Raton; London; New York: CRC Press, Taylor & Francis Group, [2018]
  • Ausgabe: Second edition
  • Umfang: xxii, 350 Seiten; Illustrationen; 26 cm
  • Sprache: Englisch
  • ISBN: 9781138035195; 113803519X
  • RVK-Notation: UP 3250 : Dotierung, Strahleneinwirkung auf Halbleiter
  • Schlagwörter: Halbleiter > Gitterbaufehler
    Halbleiter > Gitterbaufehler
    Dotierung
  • Entstehung:
  • Anmerkungen: Literaturangaben
  • Beschreibung: "This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes). It treats dopants and defects as a unified subject, offering a solid foundation for experimental methods and the theory of defects in semiconductors"--

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  • Status: Ausleihbar